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Document Number: 89029 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 10-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS8P3C, SS8P4C
Vishay General Semiconductor
New Product
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25
?C unless otherwise noted)
Fig. 1 - Maximum Forwar
d Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Juncti
on Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
2
4
6
8
10
0 25 50 75 100 125 150 175
Average Forward C
u
rrent (A)
Lead Temperature (°C)
Resistive or Inductive Load
TL
meas
ured
at the Cathode Band Terminal
0
0.8
0.4
1.2
1.6
2.0
2.4
01 23 45
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = tp/T tp
T
0.01
0.1
1
10
100
0 0.4 0.5 0.6 0.7 0.80.1 0.30.2
Instantaneous Forward Voltage (V)
Instantaneo
u
s Forward C
u
rrent (A)
TA
= 150 °C
TA
= 125 °C
TA
= 25 °C
0.001
0.01
0.1
1
10
100
1000
10 20 30 40 6050 70 9080 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Reverse C
u
rrent (mA)
TA
= 150 °C
TA
= 125 °C
TA
= 25 °C
10
1000
100
0.1 1 10 100
Reverse Voltage (V)
J
u
nction Capacitance (pF)
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 mVp-p
0.01 0.1 1 10 100
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Ambient
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